The 60th JSAP Spring Meeting,2013

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Regular sessions(Poster presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[28p-PA1-1~34] 15.4 III-V-group nitride crystals

Thu. Mar 28, 2013 1:30 PM - 3:30 PM PA1 (1st gymnasium)

[28p-PA1-24] The process of GaN double polarity selective area growth by using MOVPE (II)

○Yohei Fujita1, Yasusi Takano2, Yoku Inoue2, Takayuki Nakano2 (Shizuoka Univ.1, Shizuoka Univ.2)

Keywords:GaN、MOVPE、両極性