[28p-PA1-1~34] 15.4 III-V-group nitride crystals

[28p-PA1-5] Atomic structures and nucleation mechanism of stacking faults in InGaN nanowires

^○Masataka Imura¹, Yasuo Koide¹, Yoshiko Nakayama¹, Masaki Takeguchi¹, Shunsuke Mizutani², Takuya Tabata², Shinta Nakagawa², Masashi Yamaguchi², Hiroshi Amano^2,3 (NIMS¹, Nagoya Univ.², Akasaki Research Center³)

Keywords:InGaNナノワイヤ、走査型透過電子顕微鏡、積層欠陥