[28p-PA1-1~34] 15.4 III-V-group nitride crystals

[28p-PA1-7] Si-doping effects of In_xGa_1-xN (x~0.3) films grown by MOVPE

Akihiro Mihara¹, Y.D. Zheng^1,2, Naoteru Shigekawa³, ^○Akio Yamamoto^1,2 (Univ. of Fukui¹, JST-CREST², Osaka City Univ.³)

Keywords:InGaN、Si-doping、MOVPE