Effect of boron dopants on formation of Ge layers using sputter epitaxy method

Takahiro Tsukamoto

Presentation information

Regular sessions(Poster presentation)

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[28p-PA2-1~4] 15.5 IV-group crystals and IV-IV-group mixed crystals

Thu. Mar 28, 2013 1:30 PM - 3:30 PM PA2 (1st gymnasium)

[28p-PA2-1] Effect of boron dopants on formation of Ge layers using sputter epitaxy method

^○Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Yoshiyuki Suda¹ (Tokyo Univ. Agric. Technol.¹, NICT²)

Keywords:ゲルマニウム

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