[28p-PA3-1~5] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[28p-PA3-3] Reduction of the dislocation density of GaN substrates by double pulse laser annealing (DPLA)

^○Mariko Fujieda¹, Takamasa Ishii¹, Takeaki Sakurai¹, Takashi Sekiguchi², Katsuhiro Akimoto¹ (Univ.of Tsukuba¹, NIMS²)

Keywords:窒化ガリウム、転位