[29a-F2-1~11] 6.3 Oxide-based electronics

[29a-F2-3] △Threshold Voltage Decrease by Oxygen Thermal Treatment in TiO₂-Channel Thin Film Transistor

^○Go Oike¹, Takeaki Yajima¹, Tomonori Nishimura¹, Kosuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

Keywords:TiO2、トランジスタ、薄膜