Band Structures of Si/InGaP heterojunctions by Using Surface-Activated Bonding

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Mar 29, 2013 9:30 AM - 11:30 AM G11 (B5 2F-2205)

^○Jianbo Liang¹, Tatusya Miyazaki¹, Syouta Nisida¹, Masasi Morimoto¹, Naoteru Shigekawa¹ (Osaka City University¹)

Keywords:表面活性化ボンディング、InGaP/Si