The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[29a-G11-1~8] 14.3 Electron devices and Process technology

Fri. Mar 29, 2013 9:30 AM - 11:30 AM G11 (B5 2F-2205)

[29a-G11-2] Scaling the channel length of on Si wafer

○Atsushi Kato1, Yoshiharu Yonai1, Toru Kanazawa1, yasuyuki Miyamoto1 (Tokyo Tech1)

Keywords:MOSFET、InGaAs