Fabrication and characterization of InSb/Al<sub>0.25</sub>In<sub>0.75</sub>Sb HEMTs

Tsunagu Takahashi

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[29a-G11-1~8] 14.3 Electron devices and Process technology

Fri. Mar 29, 2013 9:30 AM - 11:30 AM G11 (B5 2F-2205)

[29a-G11-4] Fabrication and characterization of InSb/Al_0.25In_0.75Sb HEMTs

^○Tsunagu Takahashi¹, Takuya Obata¹, Yutaro Konaka¹, Yusuke Takagi¹, Shinsuke Hara¹, Hiroki Fujishiro¹, Issei Watanabe², Yoshimi Yamashita², Akira Endoh², Akifumi Kasamatsu² (Tokyo Univ. of Science¹, National Institute of Info. and Com. Tech.²)

Keywords:HEMT、InSb

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Presentation information

[29a-G11-1~8] 14.3 Electron devices and Process technology

[29a-G11-4] Fabrication and characterization of InSb/Al0.25In0.75Sb HEMTs

[29a-G11-4] Fabrication and characterization of InSb/Al_0.25In_0.75Sb HEMTs