[29a-G12-1~11] 17.4 Device application

[29a-G12-8] △Carbon-Nanotube Based Memory with Si Layer

^○Kohei Seike¹, Yusuke Fujii¹, Takafumi Kamimura¹, Yasuhide Ohno¹, Kenzo Maehashi¹, Koichi Inoue¹, Kazuhiko Matsumoto¹ (Osaka Univ. ISIR¹)

Keywords:カーボンナノチューブ、メモリ