[29a-G19-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29a-G19-10] Band-gap Control of Novel Amorphous Oxide Semiconductor: Cd-M-O (M = Ga, Si)

^○Hiroshi Yanagi¹, Chiyuki Sato¹, Nobuhito Takagi¹, Issei Suzuki², Takahisa Omata², Toshio Kamiya³, Hideo Hosono^3,4 (Univ. Yamanashi¹, Osaka Univ.², Tokyo Tech. MSL³, Tokyo Tech. FRC⁴)

Keywords:アモルファス酸化物半導体