[29a-G21-1~11] 15.4 III-V-group nitride crystals

[29a-G21-1] Optimization of the device structure in nitride-based hetero-field-effect-transistor-type photosensors

^○Mami Ishiguro¹, Kazuya Ikeda¹, Masataka Mizuno¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research Center, Nagoya Univ.²)

Keywords:PhotoFET、構造