Dependence of annealing temperature on oxide semiconductor for inorganic thin-film DC EL devices

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Fri. Mar 29, 2013 10:00 AM - 12:45 PM G5 (B5 1F-2105)

^○Masanobu Okamoto¹, Noboru Miura¹, Hironaga Matsumoto¹ (Meiji Univ.¹)

Keywords:無機EL、酸化物半導体、直流EL