[29a-G9-1~11] 13.6 Silicon devices / Integration technology

[29a-G9-7] ▼Influence of deep energy dopants on the electronic potential distribution of two-dimensional pn junctions measured by Kelvin probe force microscope

^○Roland Nowak^1,2, Daniel Moraru¹, Takeshi Mizuno¹, Ryszard Jablonski², Michiharu Tabe¹ (Res. Inst. of Electronics¹, Warsaw Univ. of Technol.²)

Keywords:KFM、pn junction、silicon-on-insulator