[29a-PB5-1~2] 9.5 New functional materials and new physical properties

[29a-PB5-2] The Effect of Substitution by F on the Thermoelectric Property of Layered Formation Semiconductor (LaO)TSb; T = Mn, Zn

^○Nagi Funakoshi¹, Yasuhiro Morosawa¹, Natsuki Kobayashi¹, Tadataka Watanabe¹, Yoshiki Takano¹, Kouichi Takase¹ (Nihon Univ.¹)

Keywords:熱電半導体