[29a-PB6-1~13] 14.2 Ultrathin films and quantum nanostructures

[29a-PB6-8] Retention characteristics of crosspoint resistance switching devices using CaF₂/CdF₂/Si quantum-well structures grown on CoSi₂/Si(100)

^○Kazuya Uryu¹, Junya Denda¹, Keita Suda¹, Yuya Kuwata¹, Masahiro Watanabe¹ (Tokyo Tech¹)

Keywords:不揮発性メモリ、量子井戸