Molecular Beam epitaxial Growth of GaAs Nanowires and Effect of Various Growth Interrption on Si(111) substrate

Presentation information

Regular sessions(Poster presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 9:30 AM - 11:30 AM PB7 (2nd gymnasium)

^○Namsoo Aｈｎ¹, Yoshiaki Araki¹, Hideaki Hibi¹, Fumitaro Ishikawa¹, Masahito Yamaguchi² (Osaka Univ.¹, Nagoya Univ.²)

Keywords:ナノワイヤ、MBE