Defect analyses of compositionally graded InGaAs layers by transmission electron microscopy

Presentation information

Regular sessions(Poster presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 9:30 AM - 11:30 AM PB7 (2nd gymnasium)

^○Takuo Sasaki¹, Toshiaki Nishi¹, Masamitu Takahasi², Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (Toyota Tech. Inst.¹, JAEA²)

Keywords:InGaAs、転位、歪