[29a-PB7-1~21] 15.3 III-V-group epitaxial crystals

[29a-PB7-18] Incorporation processes of residual impurities during GaAsN growth by atomic layer epitaxy

^○Hidetoshi Suzuki¹, Toshihiro Yamauchi¹, Tomohiro Haraguchi², Koji Maeda², Masashi Ozeki², Tetsuo Ikari² (IRO, Univ. of Miyazaki¹, Faculty of Eng. Univ. of Miyazaki²)

Keywords:GaAsN、原子層エピタキシー