[29p-G16-1~21] 15.8 Crystal evaluation, nanoimpurities and crystal defects

[29p-G16-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (6) Detection limit down to 1E-6 peak absorbance

^○Naohisa Inoue^1,5, Hirofumi Seki², Takao Sugaya³, Shigeru Shimada⁴, Yuichi Kawamura⁵ (Tokyo Univ. Agr. Technol.¹, Toray Research Center², Systems Engineering Inc.³, Bruker Otics KK⁴, Osaka Pref. Univ.⁵)

Keywords:シリコン、点欠陥、赤外吸収