^○Naohisa Inoue¹, Yasunori Goto², Hirofumi Seki³, Kaori Watanabe⁴, Yuichi Kawamura⁵ (Tokyo Univ. Agr. & Technol.¹, Toyota Motor Co.², Toray Research Center³, Systems Engineering Inc.⁴, Osaka Pref. Univ.⁵)

[29p-G16-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (6) Detection limit down to 1E-6 peak absorbance

^○Naohisa Inoue^1,5, Hirofumi Seki², Takao Sugaya³, Shigeru Shimada⁴, Yuichi Kawamura⁵ (Tokyo Univ. Agr. Technol.¹, Toray Research Center², Systems Engineering Inc.³, Bruker Otics KK⁴, Osaka Pref. Univ.⁵)

[29p-G16-9] First-principles calculation on interaction of dopant-point defect complex and metal atom in Si crystal

^○（M2）Takeshi Iwasaki¹, Koji Sueoka¹, Jun Komachi², Koichiro Saga² (Okayama Pref. Univ.¹, Sony Corporation²)

[29p-G16-10] △First-Principles Analysis on Vacancy-Type Defects Introduced by Ion Implantation

^○Takahiro Maeta^1.2, Koji Sueoka¹, Koji Izunome² (Okayama Pref. Univ.,Dept. of System Engineering¹, GlobalWafers Japan Co., Ltd.²)

[29p-G16-11] First-Principles Analysis on Gettering of Metallic Impurities by Microscopic Defects

^○Takahiro Maeta¹, Koji Sueoka¹, Koji Izunome² (Okayama Pref. Univ.,Dept. of System Engineering¹, GlobalWafers Japan Co., Ltd.²)

[29p-G16-12] In-Diffusion and Annealing of Nickel in Dislocation-Free n-Type Silicon

^○Shuji Tanaka¹, Seiji Takami¹, Takuya Mitoma¹, Koitirou Noguti¹ (Fukuoka Institute of Technology¹)

[29p-G16-13] △Dislocation behavior in device active area of surface-oxygen-concentration controlled Si wafers

^○（B）Hirotada Asazu¹, Shotaro Takeuchi¹, Hiroya Sannai¹, Haruo Sudo², Koji Araki², Yoshiaki Nakamura^1,3, Koji Izunome², Akira Sakai¹ (Osaka Univ.¹, GlobalWafers Japan Co.,Ltd.², PRESTO-JST³)

[29p-G16-14] Effect of oxygen concentration in subsurface layer on the bending strength of silicon wafers

^○Haruo Sudo¹, Tatsuhiko Aoki¹, Koji Araki¹, Hiromi Hidaka¹, Nobue Araki¹, Koji Izunome¹, Nakamura Yoshiaki², Akira Sakai² (GlobalWafers Japan¹, Osaka Univ.²)

[29p-G16-14.1] Break(15min)

[29p-G16-15] ▲Spatial Distribution of Crystal Defects and Their Impact on Electrical Properties in Multicrystalline Si

^○（P）Supawan Joonwichien¹, satoru matsushima¹, haruna watanabe¹, Noritaka Usami¹ (Institute for Materials Research, Tohoku Univ.¹)

[29p-G16-16] Enhancing effect of dislocation velocity in SiGe/ Si by Sb doping

^○Tatsuya Fushimi¹, Takuya Matsunaga¹, Yoshifumi Yamashita¹, Yutaka Ohno², Ichiro Yonenaga² (Graduate School of Natural Sci. and Tech., Okayama Univ.¹, Institute of Materials Research, Tohoku Univ.²)

[29p-G16-17] △First-Principles Analysis on Interaction of Dopant and Contamination Metal Atoms in Ge Crystals

^○（M1）Tatsunori Yamato¹, Koji Sueoka¹, Takahiro Maeta² (Okayama Pref. Univ.,Dept. of System Engineering¹, GlobalWafers Japan Co.,Ltd.²)

[29p-G16-18] Surface-induced charge at Ge(100) dimer surface and its interaction with point defects

^○Eiji Kamiyama¹, Koji Sueoka¹ (Okayama Pref. Univ.¹)

[29p-G16-19] Research of lattice defect in photonics crystal silicon

^○Yuki Hamanaka¹, Naoyuki Kawai¹, Kazumi Wada¹ (Univ. of Tokyo¹)

[29p-G16-20] Nuclear reaction analysis of Ge ion-implanted ZnO bulk single crystals : The evaluation of the displacement in oxygen lattices

^○（M1）Kazuma Kamioka¹, Takahiro Oga¹, Yusuke Izawa¹, Kazuo Kuriyama¹, Kazumasa Kushida², Astushi Kinomura³ (Hosei Univ.¹, Osaka kyouiku Univ.², AIST³)

[29p-G16-21] The evaluation of proton irradiated GaN by thermally stimulated current

^○Tsukasa Nakamura¹, Takahiro Ida¹, Kazuma Kamioka¹, Kazuo Kuriyama¹, kazumasa Kushida² (Hosei Univ.¹, Osaka kyoiku Univ.²)

Session information

[29p-G16-1~21] 15.8 Crystal evaluation, nanoimpurities and crystal defects