[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-12] Electrical properties and TFT characteristics of hydrogen-reduced amorphous oxide semiconductor, a-In-Ga-Zn-O

^○Toshio Kamiya¹, Takaya Miyase¹, Kay Domen¹, Kenji Nomura¹, Hideo Hosono¹ (Tokyo Tech¹)

Keywords:アモルファス酸化物半導体、水素不純物、薄膜トランジスタ