The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

21. Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 29, 2013 2:00 PM - 6:30 PM G19 (B5 4F-2403)

[29p-G19-12] Electrical properties and TFT characteristics of hydrogen-reduced amorphous oxide semiconductor, a-In-Ga-Zn-O

Toshio Kamiya1, Takaya Miyase1, Kay Domen1, Kenji Nomura1, Hideo Hosono1 (Tokyo Tech1)

Keywords:アモルファス酸化物半導体、水素不純物、薄膜トランジスタ