[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-17] Fabrication of self-aligned bottom-gate oxide TFTs

^○Mitsuru Nakata¹, Hiroshi Tsuji¹, Yoshihide Fujisaki¹, Hiroto Sato¹, Yoshiki Nakajima¹, Tatsuya Takei¹, Toshihiro Yamamoto¹ (NHK Sci. & Tech. Res. Labs.¹)

Keywords:酸化物半導体、TFT、レーザ