[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-2] △Degradation Mechanism of IGZO TFT under Negative Bias Illumination Stress

^○（DC）Yoshihiro Ueoka¹, Yasuaki Ishikawa¹, Um Jae Gwang², Bermundo Juan Paolo¹, Haruka Yamazaki¹, Satoshi Urakawa¹, Masahiro Horita¹, Jang Jin², Yukiharu Uraoka¹ (Nara Inst. of Sci. and Tech.¹, Kyung Hee Univ.²)

Keywords:IGZO、信頼性、DOS