[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-8] High Mobility IGZO TFT Fabricated by Atmospheric Pressure Mist CVD

^○（PC）Toshiyuki Kawaharamura¹, Takayuki Uchida², Dapeng Wang¹, Masaru Sanada², Mamoru Furuta¹ (Inst. for Nanotechnology, Kochi Univ. of Tech.¹, School of Sys. Eng., Kochi Univ. of Tech.²)

Keywords:酸化インジウムガリウム亜鉛薄膜トランジスタ、ミスト化学気相成長法、高移動度化