[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-9] Dependence of Deposition Pressure on Internal Stress in a-InGaZnO₄ Thin-films

^○Shinnosuke Iwamatsu¹, Kazushige Takechi², Yutaka Abe¹, Toru Yahagi¹, Hiroshi Tanabe², Seiya Kobayashi¹ (Yamagata Res. Inst. of Technol.¹, NLT Technologies²)

Keywords:IGZO、内部応力