The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[29p-G20-3~20] 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 1:30 PM - 6:30 PM G20 (B5 4F-2404)

[29p-G20-14] Characterization of thick InGaAsN layers grown on InP

Makoto Horiuchi1, Kouhei Miura1,2, Yasuhiro Iguchi2, Yuuichi Kawamura1 (Osaka Prefecture Univ.1, Sumitomo electric industry2)

Keywords:化合物半導体、エピタキシャル成長