Characterization of thick InGaAsN layers grown on InP

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 1:30 PM - 6:30 PM G20 (B5 4F-2404)

Makoto Horiuchi¹, Kouhei Miura^1,2, Yasuhiro Iguchi², ^○Yuuichi Kawamura¹ (Osaka Prefecture Univ.¹, Sumitomo electric industry²)

Keywords:化合物半導体、エピタキシャル成長