[29p-G20-16] Effect of H irradiation on interfacial defects in GaNAs sample grown by MBE
Keywords:希釈窒化物半導体、分子線エピタキシー
Regular sessions(Oral presentation)
15. Crystal Engineering » 15.3 III-V-group epitaxial crystals
Fri. Mar 29, 2013 1:30 PM - 6:30 PM G20 (B5 4F-2404)
Keywords:希釈窒化物半導体、分子線エピタキシー