The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[29p-G20-3~20] 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 1:30 PM - 6:30 PM G20 (B5 4F-2404)

[29p-G20-16] Effect of H irradiation on interfacial defects in GaNAs sample grown by MBE

○(M2)Ryo Matsuda1,2, Naoya Miyashita1, Muhammad Monirul Islam1, Nazmul Ahsan1, Yoshitaka Okada1,2 (The Univ. of Tokyo, RCAST1, The Univ. of Tokyo, School of Engineering2)

Keywords:希釈窒化物半導体、分子線エピタキシー