The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[29p-G20-3~20] 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 1:30 PM - 6:30 PM G20 (B5 4F-2404)

[29p-G20-18] Growth and emission characteristics of GaNAsP/GaP 3QW on GaP substrate by MOCVD

○（M2）Toshihiro Furukawa1, Fumiya Hoshino1, Yoshitaka Kobayashi1, Tomoyuki Miyamoto1 (Tokyo Institute of Technology1)

Keywords:MOCVD