The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[29p-G20-3~20] 15.3 III-V-group epitaxial crystals

Fri. Mar 29, 2013 1:30 PM - 6:30 PM G20 (B5 4F-2404)

[29p-G20-8] Electrical properties of C60 doped GaAs pin diodes grown by MBE

○Jiro Nishinaga1,2, Yoshiji Horikoshi3 (Waseda Univ.1, JST PRESTO2, Waseda Univ.3)

Keywords:GaAs、フラーレン、MBE