[29p-G21-1~21] 15.4 III-V-group nitride crystals

[29p-G21-12] △Direct evidence of electron overflow by additional active region on electron-blocking layer

^○（B）Kento Hayashi¹, Kenjo Matsui¹, Takatoshi Morita¹, Tomoyuki Suzuki¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (Meijo Univ.¹, Akasaki Research Center.,Nagoya Univ²)

Keywords:オーバーフロー、電子、ドループ