The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[29p-G21-1~21] 15.4 III-V-group nitride crystals

Fri. Mar 29, 2013 1:00 PM - 7:00 PM G21 (B5 4F-2405)

[29p-G21-14] Efficiency Improvement of InGaN based Light-Emitting Diodes

○Haziq Muhammad1, Yutaro Hirota1, Seita Miyoshi1, Keisuke Yamane1, Narihito Okada1, Kazuyuki Tadatomo1 (Yamaguchi Univ. Grad. School of Sci. & Eng.1)

Keywords:InGaN、発光ダイオード、有機金属気相成長法