[29p-G21-1~21] 15.4 III-V-group nitride crystals

[29p-G21-15] △Characteristics of LED grown on semipolar {11-22} InGaN underlayer as a function of the underlayer thickness

^○Kota Nakao¹, Seita Miyoshi¹, Katsumi Uchida¹, Keisuke Yamane¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (Grad. School of Sci. & Eng., Yamaguchi Univ.¹)

Keywords:semipolar、GaN