[29p-G21-1~21] 15.4 III-V-group nitride crystals

[29p-G21-19] Fabrication of very thin GaN-based devices by MeTRe method

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Yasuyuki Kobayashi¹, Tetsuya Akasaka¹, Hideki Yamamoto¹, Toshiki Makimoto¹ (NTT Basic Research Labs.¹)

Keywords:GaN、BN