The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[29p-G21-1~21] 15.4 III-V-group nitride crystals

Fri. Mar 29, 2013 1:00 PM - 7:00 PM G21 (B5 4F-2405)

[29p-G21-19] Fabrication of very thin GaN-based devices by MeTRe method

Masanobu Hiroki1, Kazuhide Kumakura1, Yasuyuki Kobayashi1, Tetsuya Akasaka1, Hideki Yamamoto1, Toshiki Makimoto1 (NTT Basic Research Labs.1)

Keywords:GaN、BN