Crystal Growth β-FeSi<sub>2</sub> film by MOCVD method on Si(100) with Ag layer

Kensuke Akiyama

Presentation information

Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[29p-G7-1~19] 14.1 Physical properties of exploratory materials

Fri. Mar 29, 2013 1:00 PM - 6:00 PM G7 (B5 2F-2201)

[29p-G7-12] Crystal Growth β-FeSi₂ film by MOCVD method on Si(100) with Ag layer

^○Kensuke Akiyama^1,2, Ryo Takahashi¹, Yoshihisa Matsumoto¹, Hiroshi Funakubo², Masaru Itakura³ (Kanagawa Ind. Tech. Cent.¹, Tokyo Inst. Tech.², Kyusyu Univ.³)

Keywords:鉄シリサイド、β-FeSi2

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Presentation information

[29p-G7-1~19] 14.1 Physical properties of exploratory materials

[29p-G7-12] Crystal Growth β-FeSi2 film by MOCVD method on Si(100) with Ag layer

[29p-G7-12] Crystal Growth β-FeSi₂ film by MOCVD method on Si(100) with Ag layer