[29p-G7-1~19] 14.1 Physical properties of exploratory materials

[29p-G7-3] Fabrication and characterizations of P-doped n-type BaSi₂ epitaxial films grown by MBE

^○Ryota Takabe¹, Masakazu Baba¹, Kotaro Nakamura¹, ajmal Khan¹, Weijie Du¹, Shintaro Koike¹, Kaoru Toko¹, Kosuke Hara², Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. Tsukuba¹, Univ. Tohoku², JST-CREST³)

Keywords:BaSi2、P