The 60th JSAP Spring Meeting,2013

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Regular sessions(Oral presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[29p-G7-1~19] 14.1 Physical properties of exploratory materials

Fri. Mar 29, 2013 1:00 PM - 6:00 PM G7 (B5 2F-2201)

[29p-G7-9] Formation of BaSi2 films by RF sputtering method on a heated substrate

○Nurul Amal Abdul Latiff1, Takahiro Yoneyama1, Tetsuo Shibutami2, Keitaro Matsumaru2, Kaoru Toko1, Takashi Suemasu1,3 (Inst. of Appl. Phys., Univ. Tsukuba1, Tosoh Corporation2, JST-CREST3)

Keywords:環境半導体、BaSi2,、バリウムシリサイド