[29p-G9-1~7] 13.6 Silicon devices / Integration technology

[29p-G9-5] Characteristics of double quantum dot Si single-electron transistor caused by the number change of electrons in quantum dot

^○Takafumi Uchida¹, Hiroto Takenaka¹, Isamu Yoshioka¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (IST. Hokkaido Univ.¹, NTT Basic Research Labs.²)

Keywords:二重量子ドット、単電子トランジスタ、シリコン