[29p-PA2-1~10] 14.3 Electron devices and Process technology

[29p-PA2-1] Molecular beam epitaxial growth of InAs/AlGaSb heterostructures and fabrication of hetero-junction field-effect transistors using a high dielectric constant gate material

^○kouhei Moriguchi¹, Kazuiti Nishisaka¹, Toshihiko Maemoto¹, Kenichi Ogata¹, Shigehiko Sasa¹ (Osaka Institute of Technology¹)

Keywords:InAs/AlGaSbヘテロ構造トランジスタ