[29p-PA2-1~10] 14.3 Electron devices and Process technology

[29p-PA2-10] C-V profile analysis of plasma-induced defects in n-GaN upon bias-anneal

Koji Takeshita¹, ^○Seiji Nakamura¹, Tsugunori Okumura¹ (Tokyo Metropolitan Univ.¹)

Keywords:GaN、plasma、defect