Band Structures of Si/GaAs heterojunctions by Using Surface-Activated Bonding

Presentation information

Regular sessions(Poster presentation)

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PA2 (1st gymnasium)

^○Jianbo Liang¹, Tatusya Miyazaki¹, Syouta Nisida¹, Masasi Morimoto¹, Naoteru Shigekawa¹ (Osaka City University¹)

Keywords:表面活性化ボンディング、Si/GaAs