[29p-PA2-1~10] 14.3 Electron devices and Process technology

[29p-PA2-4] Sub-nm step by step etching of AlGaN/GaN using ozone oxidation

^○Yusuke Takei¹, Masayuki Kamiya¹, Kazuma Terayama¹, Hiroaki Yonezawa¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Ahmet Parhat², Takeo Hattori², Hiroshi Iwai² (Tokyo Inst. of Technology¹, Tokyo Inst. of Technology²)

Keywords:GaN、エッチング、オゾン