[29p-PA2-1~10] 14.3 Electron devices and Process technology

[29p-PA2-9] A simulation study on drain leakage current of AlGaN/GaN HEMT

^○Toshiyuki Oishi¹, Kazuo Hayashi¹, Yoshitaka Kamo¹, Yutaro Yamaguchi¹, Hiroshi Otsuka¹, Koji Yamanaka¹, Masatoshi Nakayama¹, Yasuyuki Miyamoto² (Mitsubishi Electric¹, Tokyo Institute of Technology²)

Keywords:GaN、デバイスシミュレーション、トランジスタ