The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Poster presentation)

13. Semiconductors A (Silicon) » 13.3 Insulator technology

[29p-PB1-1~20] 13.3 Insulator technology

Fri. Mar 29, 2013 1:30 PM - 3:30 PM PB1 (2nd gymnasium)

[29p-PB1-16] Spontaneous formation of aluminum germanate on Ge substrate by atomic layer deposition with microwave-generated atomic oxygen

Kousei Yanachi1, Takehiro Hanada1, Hiroki Ishizaki1, Yohei Otani1, Chiaya Yamamoto2, Junji Yamanaka2, Tetsuya Sato2, Hiroshi Okamoto3, Yukio Fukuda1 (Tokyo Univ. of Science, Suwa1, Univ. of Yamanashi2, Hirosaki Univ.3)

Keywords:germanium、aluminum-germanate、interlayer