[29p-PB2-1~3] 13.4 Interconnection technology

[29p-PB2-3] Size Dependence of the resisitivity of Ni silicide Nanowire formed by 2step annealing process

^○Jinhan Song¹, Kazuki Matsumoto¹, Kuniyuki Kakushima², Ahmet Parhat¹, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Takeo Hattori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

Keywords:Nanowire