[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-1] C-face Epitaxial Growth of 4H-SiC on Quasi-150mm-Diameter Wafers

^○Johji Nishio^1,2, Chiaki Kudou^1,3, Kentaro Tamura^1,4, Kazutoshi Kojima^1,5, Toshiyuki Ohno^1,6 (FUPET¹, Toshiba Corp.², Panasonic Corp.³, ROHM Co., Ltd⁴, AIST⁵, Hitachi, Ltd⁶)

Keywords:SiC、C面、エピタキシャル成長