[29p-PB4-1~25] 15.6 IV-group-based compounds

[29p-PB4-14] Segregation of C atoms at SiO₂/SiC interface by plasma oxidation at near room temperature

^○Naoki Saito¹, Akito Ｉｍａｆｕｋｕ¹, Hiroaki Nishikawa¹, Yasuhisa Sano¹, Kentaro Kawai¹, Junichi Uchikoshi¹, Mizuho Morita¹, Kenta Arima¹ (Osaka Univ.¹)

Keywords:SiC、酸化